e-Περιοδικό Επιστήμης & Τεχνολογίας

e-Journal of Science & Technology, (e-JST)

Orientation of Bi_3.2La_0.8Ti₃O₁₂ Ferroelectric Thin Films with Different Annealing schedules

Shen Qing

 School of Materials Science and Engineering, Shaanxi University of Science and Technology, China, (710021), E-mail: hehy@sust.edu.cn

 Abstract

Fatigue-free Bi_3.2La_0.8Ti₃O₁₂ Ferroelectric thin films were successfully prepared on p-Si(100) substrates using metalorganic solution deposition process. The orientation and formation of 5-layers thin films were studied under different technologic condition using XRD. Experiment results indicated that increase in annealing time at 700^oC after preannealing for 10min at 400^oC can remarkably increased (200)-orientation of the films either at high content of citric acid or at low content of citric acid in the precursor solution, and high content of citric acid increased the film thickness and was conducive to the a-orientation of the films with the preannealing, low concentration of the solution was conducive to the c-orientation of the films without the preannealing.   

Key words: Bi_3.2La_0.8Ti₃O₁₂, ferroelectric film, technologic condition, orientation

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